ION DRIFT IN CD-RICH HGCDTE CRYSTALS

Authors
BARBOT JF WARTLICK BO PINHEDE LF BLANCHARD C
Citation
Jf. Barbot et al., ION DRIFT IN CD-RICH HGCDTE CRYSTALS, Journal of electronic materials, 25(8), 1996, pp. 1172-1175
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
8
Year of publication
1996
Pages
1172 - 1175
Database
ISI
SICI code
0361-5235(1996)25:8<1172:IDICHC>2.0.ZU;2-V
Abstract
Ion drift in the electric field of a depleted region has been studied at about room temperature in intentionally Cu-doped p-type Hg0.3Cd0.7T e bulk materials. Capacitance-voltage measurements have mainly been us ed to investigate the drift of interstitial copper. Diffusion data of copper has been obtained using classical theoretical models based on t he dissociation-formation of acceptor-donor complexes (A(s)D(i)). The possibility of junction creation by this ion manipulation under a stro ng electric field is discussed.