MAGNETOLUMINESCENCE PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERS AND SUPERLATTICE STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

Citation
Tk. Tran et al., MAGNETOLUMINESCENCE PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERS AND SUPERLATTICE STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 25(8), 1996, pp. 1203-1208
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
25
Issue
8
Year of publication
1996
Pages
1203 - 1208
Database
ISI
SICI code
0361-5235(1996)25:8<1203:MPOHEL>2.0.ZU;2-2
Abstract
We present a study of the electro-optical properties ofHg(1-x)Cd(x)Te epitaxial layers and Hg1-xCdxTe/CdTe (0.28 < x < 0.30) superlattice st ructures by x-ray diffraction, lateral transport and photo- and magnet o-luminescence measurements. Systematic studies of the excitation inte nsity and magnetic field dependence of the photoluminescence revealed direct evidence of an excitonic contribution to the observed luminesce nce in Hg1-xCdxTe epitaxial layers. Similar investigations of the supe rlattice structures indicated that excitonic corrections were required to adequately fit the luminescence data. Optical gains of 80 cm(-1) w ere obtained for an excitation intensity of 100 kW/cm(2) indicating su itable electro-optical properties for making efficient mid-infrared la ser diodes.