ELECTRICAL CHARACTERIZATION OF VERY-NARROW-GAP BULK HGCDTE SINGLE-CRYSTALS BY VARIABLE MAGNETIC-FIELD HALL MEASUREMENTS

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed o n very narrow-gap bulk-grown Hg1-xCdxTe single crystals (0.165 less th an or equal to x less than or equal to 0.2) at various temperatures (1 0 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-conductivity- tensor scheme. The present data together with the selected data set re ported by other workers exhibit a pronounced peak when the electron mo bility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-cros sing (E(g) approximate to 0). The observed position (x approximate to 0.165), height (approximate to 4 x 10(2) m(2)/Vs), and width (approxim ate to 0.01 in x) of the mobility-peak can be explained by a simple si mulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consiste nt with the finiteness of the observed electron mobility and is found to be of the order of 10(-4) of the mass of a free electron.