Semiconductor gamma-ray detector arrays made of II-VI materials such a
s CdTe or CdZnTe hold great promise for improving the spatial resoluti
on and energy resolution of nuclear medicine imaging systems. This fie
ld has benefited greatly from technologies developed in infrared imagi
ng. This report surveys the state of the art for producing high-resolu
tion semiconductor arrays with emphasis on II-VI materials and conside
rs the prospects for producing a semiconductor detector gamma camera.
A number of practical designs are reviewed that make use of single-cha
rge-carrier dominance effects to improve useful photopeak fraction and
thus efficiency.