IN-SITU SPECTROSCOPIC ELLIPSOMETRY OF HGCDTE

Authors
BENSON JD CORNFELD AB MARTINKA M SINGLEY KM DERZKO Z SHORTEN PJ DINAN JH
Citation
Jd. Benson et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY OF HGCDTE, Journal of electronic materials, 25(8), 1996, pp. 1406-1410
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
8
Year of publication
1996
Pages
1406 - 1410
Database
ISI
SICI code
0361-5235(1996)25:8<1406:ISEOH>2.0.ZU;2-6
Abstract
An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this d evice, in-situ analysis of composition, growth rate, and surface clean liness were monitored. A real time model which determined the composit ional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.