COMPUTER-SIMULATIONS OF POROUS SILICON FORMATION

A computer simulation has been carried out to study the dynamics of po re formation in porous silicon. Porous structures were generated by a simple three-dimensional Monte Carlo calculation, based on a modified percolation model for pore growth in lightly and heavily doped silicon substrates. The results are consistent with recent observations. As a n approximate guide, the type formed morphology was shown to depend ma inly on the doping level of the substrate. A strong dependence of the average porosity on the doping level of the substrate is also predicte d. (C) 1996 American Vacuum Society.