COMPARISON OF THE PHYSICAL AND ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE AND DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE SIO2

A comparison was made of thin films of silicon dioxide deposited, at f loating temperatures, using electron cyclotron resonance plasma enhanc ed chemical vapor deposition (ECR PECVD) and distributed electron cycl otron resonance plasma enhanced chemical vapor deposition (DECR PECVD) . The refractive index, composition, and chemical bonding of the plasm a oxides were determined by null and spectroscopic ellipsometry, nucle ar reaction analysis, and Fourier transform infrared spectroscopy and were compared with thermal oxides. The damaged layer at the Si/SiO2 in terface resulting from ECR and DECR techniques was evaluated by spectr oscopic ellipsometry. Finally, high frequency and quasi-static capacit ance voltage characteristics and ramped current voltage measurements w ere performed to determine the electrical properties of the ECR and DE CR deposited silicon oxide. Device quality SiO2 thin films have been p repared using both deposition techniques: low interface state density [5x10(10) eV(-1) cm(-2) (ECR) or 2.5x10(10) eV(-1) cm(-2) (DECR)], and high critical field [5.2 MV/cm (ECR) or 6 MV/cm (DFCR)] have been ach ieved. (C) 1996 American Vacuum Society.