METAL STACK ETCHING USING A HELICAL RESONATOR PLASMA

A low-pressure etching process for advanced aluminum metallization sta cks was developed using a high-density helical resonator plasma source (Prototech model ESRF 600) mounted on a Lucas Labs cluster tool. The metallization stacks consisted of a 300 Angstrom TiN antireflection la yer on 6000 Angstrom of Al (1% Cu) with a 1000 Angstrom TiN diffusion barrier and a 100 Angstrom Ti film to enhance adhesion to the underlyi ng SiO2. The features widths were as small as 0.45 mu m. The films wer e etched using gas mixtures of Cl-2/BCl3. The BCl3 proved to be an imp ortant additive to reduce notching of the Al film at the interface bet ween the Al and the top layer of TiN. Best feature profiles were obtai ned using 80-90 seem Cl-2 and 10-20 sccm BCl3 at the following reactor conditions: 2.0 mTorr, wafer platen temperature T=0 degrees C, 100 W rf bias power, and 1500 W source power. More anisotropic profiles are obtained by either decreasing the wafer platen temperature or increasi ng the rf-bias power. The photoresist is also stripped in the same pro cess chamber using an oxygen plasma at 5 mTorr, 50 W rf-bias power, an d 1500 W source power at a chuck temperature of 25 degrees C. Extensiv e application of real-time process diagnostics, including optical emis sion spectroscopy and full wafer interferometry, aided process develop ment by identifying end points, etching rates, and etching rate unifor mities. (C) 1996 American Vacuum Society.