PATTERNED EUTECTIC BONDING WITH AL GE THIN-FILMS FOR MICROELECTROMECHANICAL SYSTEMS/

In this article, we report our results using the aluminum/germanium eu tectic to create high quality patterned bonds between two silicon dice . The bonds are formed using thin metal layers and with essentially no pressure applied. We have measured bond strength by fabricating and b onding patterned dice. Pull tests were conducted and the force require d to separate the bonds was measured and found to be about 1.6x10(7) P a. When bonds break, portions of the substrate are removed. Testing of the hermiticity of the bond demonstrated that leak rates below the de tection limit of the leak tester (10(-9) sccs) are possible. (C) 1996 American Vacuum Society.