SOLVENT EFFECT ON THE PROPERTIES OF SULFUR PASSIVATED GAAS

Citation
Vn. Bessolov et al., SOLVENT EFFECT ON THE PROPERTIES OF SULFUR PASSIVATED GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2761-2766
Citations number
30
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
4
Year of publication
1996
Pages
2761 - 2766
Database
ISI
SICI code
1071-1023(1996)14:4<2761:SEOTPO>2.0.ZU;2-G
Abstract
Photoluminescence and x-ray photoelectron spectroscopy have been used to study the solvent effect on surface properties of GaAs passivated i n different sulfide solutions. It has been found that sulfur passivati on could be made more efficient by decreasing the solution dielectric constant through the use of various alcohols as solvents. Specifically , the band edge photoluminescence intensity is much higher, the total amount of oxides is lower, and sulfur coverage is higher compared with a GaAs surface treated in an aqueous sulfide solution. The role of th e solvent in sulfur passivation is discussed. (C) 1996 American Vacuum Society.