Vn. Bessolov et al., SOLVENT EFFECT ON THE PROPERTIES OF SULFUR PASSIVATED GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2761-2766
Photoluminescence and x-ray photoelectron spectroscopy have been used
to study the solvent effect on surface properties of GaAs passivated i
n different sulfide solutions. It has been found that sulfur passivati
on could be made more efficient by decreasing the solution dielectric
constant through the use of various alcohols as solvents. Specifically
, the band edge photoluminescence intensity is much higher, the total
amount of oxides is lower, and sulfur coverage is higher compared with
a GaAs surface treated in an aqueous sulfide solution. The role of th
e solvent in sulfur passivation is discussed. (C) 1996 American Vacuum
Society.