INTERACTION OF HYDROGEN-IONS WITH OXIDIZED GAAS(100) AND ALAS(100) SURFACES

We have performed photoemission experiments, using a tunable soft x-ra y synchrotron radiation source to study the chemical changes of oxidiz ed GaAs and AlAs surfaces subject to exposure from hydrogen ions. Resu lts indicate that the net effects for hydrogen ion irradiation are (i) the reduction of arsenic and (ii) the growth Of the cation oxide comp onents. The reduction of arsenic can result from the formation/desorpt ion of arsine. The oxide overlayer after hydrogen ion treatments is do minated by cation oxides which are the more stable chemical species as described in the phase diagram. This oxide layer should then remain s table in atmosphere. These results can provide insight into the chemic al reaction between hydrogen ions and oxidized AlGaAs surfaces. (C) 19 96 American Vacuum Society.