REFLECTION ANISOTROPY SPECTROSCOPY, SURFACE PHOTOVOLTAGE SPECTROSCOPY, AND CONTACTLESS ELECTROREFLECTANCE INVESTIGATION OF THE INP IN0.53GA0.47AS(001)HETEROJUNCTION SYSTEM/

Authors
LEIBOVITCH M RAM P MALIKOVA L POLLAK FH FREEOUF JL KRONIK L MISHORI B SHAPIRA Y CLAWSON AR HANSON CM
Citation
M. Leibovitch et al., REFLECTION ANISOTROPY SPECTROSCOPY, SURFACE PHOTOVOLTAGE SPECTROSCOPY, AND CONTACTLESS ELECTROREFLECTANCE INVESTIGATION OF THE INP IN0.53GA0.47AS(001)HETEROJUNCTION SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3089-3094
Citations number
31
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
4
Year of publication
1996
Pages
3089 - 3094
Database
ISI
SICI code
1071-1023(1996)14:4<3089:RASSPS>2.0.ZU;2-6
Abstract
Using the optical methods of reflection anisotropy spectroscopy, surfa ce photovoltage spectroscopy, and contactless electroreflectance, we h ave conducted an ex situ investigation of (a) the InP/In0.53Ga0.47As(0 01) heterojunction interface as a function of InP overlayer thickness (50-1000 nm) and (b) the surfaces of n- and p-doped In0.53Ga0.47As(001 ). All samples were fabricated by organometallic vapor phase epitaxy. The results from these optical probes make it possible to form a compr ehensive quantitative picture of the InP/InGaAs heterojunction, includ ing conduction and valence band offsets of 275 and 325 meV, respective ly, as well as the (001) surface of InGaAs(surface Fermi level = 200 m V from the conduction band edge). (C) 1996 American Vacuum Society.