REFLECTION ANISOTROPY SPECTROSCOPY, SURFACE PHOTOVOLTAGE SPECTROSCOPY, AND CONTACTLESS ELECTROREFLECTANCE INVESTIGATION OF THE INP IN0.53GA0.47AS(001)HETEROJUNCTION SYSTEM/
M. Leibovitch et al., REFLECTION ANISOTROPY SPECTROSCOPY, SURFACE PHOTOVOLTAGE SPECTROSCOPY, AND CONTACTLESS ELECTROREFLECTANCE INVESTIGATION OF THE INP IN0.53GA0.47AS(001)HETEROJUNCTION SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3089-3094
Using the optical methods of reflection anisotropy spectroscopy, surfa
ce photovoltage spectroscopy, and contactless electroreflectance, we h
ave conducted an ex situ investigation of (a) the InP/In0.53Ga0.47As(0
01) heterojunction interface as a function of InP overlayer thickness
(50-1000 nm) and (b) the surfaces of n- and p-doped In0.53Ga0.47As(001
). All samples were fabricated by organometallic vapor phase epitaxy.
The results from these optical probes make it possible to form a compr
ehensive quantitative picture of the InP/InGaAs heterojunction, includ
ing conduction and valence band offsets of 275 and 325 meV, respective
ly, as well as the (001) surface of InGaAs(surface Fermi level = 200 m
V from the conduction band edge). (C) 1996 American Vacuum Society.