Q. Jiang et al., CORRELATION BETWEEN DYNAMIC MAGNETIC HYSTERESIS LOOPS AND NANOSCALE ROUGHNESS OF ULTRATHIN CO FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3180-3188
Ultrathin Co films were epitaxially grown on a Cu(001) surface with di
fferent initial roughness created by Ar ion sputtering. The roughness
of the Cu substrate and the Co film were characterized by high resolut
ion low energy electron diffraction. The measured angular profiles wer
e compared with a diffraction theory for rough surfaces and the roughn
ess parameters were extracted quantitatively. Magnetic hysteresis loop
s of these characterized films were measured by surface magneto-optic
Kerr effect. The hysteresis loop shape and loop area can be related to
the nanoscale roughness in the Co films. For the roughest film with i
nterface width approximate to 1.2t, where t is the single atomic step
height, the magnetization is reduced several fold compared with that o
f smooth films with interface width approximate to 0.5t. Also, the coe
rcivity in the roughest film is the highest and there exists a wide ra
nge of nucleation centers and coercive fields for magnetic domain reve
rsals. These are related to the high step density in the rough substra
te as the pinning centers. The hysteresis loop changes its shape and a
rea under a sinusoidal external magnetic field as functions of frequen
cy and field amplitude for all films. For the smooth films in the low
frequency and low field regimes the loop area shows a 2/3 power law sc
aling behavior. The 2/3 value of scaling exponents are consistent with
the prediction of a dynamic mean field theory with a double-well ener
gy barrier. For a film with the same interface width but different ste
p density and lateral correlation length the scaling exponents deviate
from 2/3 value drastically. (C) 1996 American Vacuum Society.