AN ANALYTICAL INSULATED-GATE BIPOLAR-TRANSISTOR (IGBT) MODEL FOR STEADY-STATE AND TRANSIENT APPLICATIONS UNDER ALL FREE-CARRIER INJECTION CONDITIONS

Authors
YUE Y LIOU JJ BATARSEH I
Citation
Y. Yue et al., AN ANALYTICAL INSULATED-GATE BIPOLAR-TRANSISTOR (IGBT) MODEL FOR STEADY-STATE AND TRANSIENT APPLICATIONS UNDER ALL FREE-CARRIER INJECTION CONDITIONS, Solid-state electronics, 39(9), 1996, pp. 1277-1282
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
9
Year of publication
1996
Pages
1277 - 1282
Database
ISI
SICI code
0038-1101(1996)39:9<1277:AAIB(M>2.0.ZU;2-7
Abstract
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical mo del for the steady-state and transient characteristics of such a devic e. The model is derived rigorously from the ambipolar transport equaio n and is valid for all free-carrier injection conditions, rather than just for a special case (i.e. low or high free-carrier injection) cons idered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional simulator called MEDICI are also incl uded in support of the model. Copyright (C) 1996 Elsevier Science Ltd