ELECTRICAL-TRANSPORT IN P-GAN, N-INN AND N-INGAN

Authors
GEERTS W MACKENZIE JD ABERNATHY CR PEARTON SJ SCHMIEDEL T
Citation
W. Geerts et al., ELECTRICAL-TRANSPORT IN P-GAN, N-INN AND N-INGAN, Solid-state electronics, 39(9), 1996, pp. 1289-1294
Citations number
48
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
9
Year of publication
1996
Pages
1289 - 1294
Database
ISI
SICI code
0038-1101(1996)39:9<1289:EIPNAN>2.0.ZU;2-S
Abstract
Variable temperature (1.7-400 K) and field (0-30 T) Hall measurements were employed to study carrier transport phenomena in p-type GaN (C) a nd n-type InN and InGaN. All three materials show metallic conduction which in the p-GaN is due to compensated carbon-related accepters and in the InN and InGaN due to intrinsic shallow donors. The InGaN shows a negative magnetoresistance over the complete investigated temperatur e range. Copyright (C) 1996 Elsevier Science Ltd