TRANSIENT SUBSTRATE CURRENT IN THE SOI-LIGBT

Authors
SUMIDA H HIRABAYASHI A TAGAMI S
Citation
H. Sumida et al., TRANSIENT SUBSTRATE CURRENT IN THE SOI-LIGBT, Solid-state electronics, 39(9), 1996, pp. 1299-1303
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
9
Year of publication
1996
Pages
1299 - 1303
Database
ISI
SICI code
0038-1101(1996)39:9<1299:TSCITS>2.0.ZU;2-B
Abstract
In this paper the transient substrate current during switching under a n inductive load of a lateral insulated gate bipolar transistor on a s ilicon-on-insulator film (SOI-LIGBT) was investigated numerically and experimentally. Substrate currents at the turn-on and turn-off transie nts of the device were determined, and their behavior analyzed by nume rical results of the carrier and potential distribution in the device. Copyright (C) 1996 Elsevier Science Ltd