A NEW ANALYTICAL MODEL FOR DETERMINATION OF BREAKDOWN VOLTAGE OF RESURF STRUCTURES

The paper presents an analytical model for determination of the basic breakdown properties of Resurf structures. The model is based on separ ate determination of lateral and vertical diode breakdown voltages con stituting the Resurf structure, by taking into account the vertical di ode modulation effect on the lateral depletion layer spreading, i.e. t he two-dimensional effects of the Resurf structure. The obtained resul ts are well in agreement with those from the literature as well as fro m numerical modeling with the MEDICI device simulation program. The de rived analytical model enables sensitivity analysis of three basic des ign parameters (substrate and epitaxial layer doping concentrations an d epitaxial layer thickness) and drift region length on the breakdown voltage of the Resurf structures. The derived model offers several ext ensions for analysis of breakdown properties of various Resurf structu res. Copyright (C) 1996 Elsevier Science Ltd