MODELING OF A MOSFETS PARASITIC RESISTANCES NARROW WIDTH AND BODY BIAS EFFECTS FOR AN IC SIMULATOR

Authors
CHEN K CHENG YH HU CM LIU ZH JENG MC KO PK
Citation
K. Chen et al., MODELING OF A MOSFETS PARASITIC RESISTANCES NARROW WIDTH AND BODY BIAS EFFECTS FOR AN IC SIMULATOR, Solid-state electronics, 39(9), 1996, pp. 1405-1408
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
9
Year of publication
1996
Pages
1405 - 1408
Database
ISI
SICI code
0038-1101(1996)39:9<1405:MOAMPR>2.0.ZU;2-J
Abstract
Based on experimental data and physical understanding of the narrow wi dth effect of source/drain parasitic series resistance of LDD MOSFETs, dimension and bias dependent models of R(ds) are derived and discusse d. A simplified model for an IC simulator is proposed for the first ti me. The new R(ds) model is compared with the measurement data for wide ranges of W and V-bs for several technologies. Excellent accuracy is found with all the technologies tested. The model is implemented in BS IM3v3. Copyright (C) 1996 Elsevier Science Ltd