PROPERTIES OF GAAS AND ALXGA1-XAS LAYERS GROWN FROM YTTERBIUM-DOPED GALLIUM MELTS BY LIQUID-PHASE EPITAXY

Authors
SEMENOVA GN KRYSHTAB TG KLADKO VP KRUKOVSKII SI SVITELSKII AV
Citation
Gn. Semenova et al., PROPERTIES OF GAAS AND ALXGA1-XAS LAYERS GROWN FROM YTTERBIUM-DOPED GALLIUM MELTS BY LIQUID-PHASE EPITAXY, Inorganic materials, 32(8), 1996, pp. 807-809
Citations number
11
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
8
Year of publication
1996
Pages
807 - 809
Database
ISI
SICI code
0020-1685(1996)32:8<807:POGAAL>2.0.ZU;2-G
Abstract
AlxGa1-xAs and GaAs layers were grown by liquid-phase epitaxy from Yb- doped gallium melts. Electrical, photoluminescence, and x-ray measurem ents show that there is an optimal dopant content of the melt (atomic fraction of Yb N-Yb(m) similar to 0.5 x 10(-4)) that allows one to pro duce high-quality epilayers. In the optimal range of concentrations, Y b acts mainly as a getter of residual impurities and simultaneously af fects stoichiometry of the epilayer. Small of Yb incorporated have no effect on its electrical properties.