HETEROSTRUCTURES BASED ON INDIUM SELENIDES

Oxide/p-In4Se3 and n-InSe/p-In4Se3 heterostructures were prepared by t hermal oxidation of In4Se3 and by bringing the components into optical contact, respectively The high quality of the diodes obtained was dem onstrated by measuring capacitance-voltage and current-voltage charact eristics. The long-wavelength edge of the spectral response lies near 1.8 mu m. Qualitative energy-band diagrams and some photoelectric prop erties are reported.