MINORITY-CARRIER DIFFUSION LENGTH AT P-N-JUNCTIONS PRODUCED IN P-CD0.8HG0.2TE BY ION-BEAM MILLING

Authors
BELAS E FRANC J GRILL R TOTH A HOSCHL P SITTER H MORAVEC P LISCHKA K
Citation
E. Belas et al., MINORITY-CARRIER DIFFUSION LENGTH AT P-N-JUNCTIONS PRODUCED IN P-CD0.8HG0.2TE BY ION-BEAM MILLING, Inorganic materials, 32(8), 1996, pp. 836-839
Citations number
11
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
8
Year of publication
1996
Pages
836 - 839
Database
ISI
SICI code
0020-1685(1996)32:8<836:MDLAPP>2.0.ZU;2-C
Abstract
The parameters of p-n junctions produced by ion-beam milling of the p- Cd0.82Hg0.2Te surface were assessed by means of electron-beam-induced- current imaging. The mechanism responsible for formation of the n-type layer is discussed in terms of the diffusion of mercury interstitials produced at the ion-milled surface, The proposed technique is shown t o yield high-quality materials suitable for fabrication of photoresist ors and SPRITE detectors.