COMBINED DOPING OF PB1-XSNXTE EPITAXIAL LAYERS

Authors
VODOPYANOV VN KONDRATENKO MM SLYNKO EI
Citation
Vn. Vodopyanov et al., COMBINED DOPING OF PB1-XSNXTE EPITAXIAL LAYERS, Inorganic materials, 32(8), 1996, pp. 840-842
Citations number
12
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
8
Year of publication
1996
Pages
840 - 842
Database
ISI
SICI code
0020-1685(1996)32:8<840:CDOPEL>2.0.ZU;2-0
Abstract
Pb1-xSnxTe epitaxial layers singly doped with cadmium or indium and co doped with both impurities were grown by the hot-wall method from a si ngle vapor source. By varying deposition conditions and dopant content , it is possible to obtain both p-type and n-type epilayers with stabl e electrical properties and a carrier concentration of similar to 10(1 6) cm(-3).