STABILIZING EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF CD1-XMNXTE SINGLE-CRYSTALS

Citation
Av. Savitskii et al., STABILIZING EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF CD1-XMNXTE SINGLE-CRYSTALS, Inorganic materials, 32(8), 1996, pp. 843-845
Citations number
9
Categorie Soggetti
Material Science
Journal title
ISSN journal
00201685
Volume
32
Issue
8
Year of publication
1996
Pages
843 - 845
Database
ISI
SICI code
0020-1685(1996)32:8<843:SEOAOT>2.0.ZU;2-Q
Abstract
Electrical, optical, and magnetic properties of Cd1-xMnxTe (0.1 less t han or equal to x less than or equal to 0.3) single crystals grown by the Bridgman technique and annealed under various conditions were inve stigated. The annealing effect was found to depend on cooling rate. He at treatment followed by slow cooling to 723 K (v = 1 K/h) under condi tions preventing sample evaporation stabilizes the electrical properti es of the material.