RECOMBINATION EMISSION FROM NONUNIFORMLY HEATED GRADED SEMICONDUCTOR STRUCTURES

Authors
SAVITSKII VG SOKOLOVSKII BS
Citation
Vg. Savitskii et Bs. Sokolovskii, RECOMBINATION EMISSION FROM NONUNIFORMLY HEATED GRADED SEMICONDUCTOR STRUCTURES, Inorganic materials, 32(8), 1996, pp. 850-853
Citations number
8
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
8
Year of publication
1996
Pages
850 - 853
Database
ISI
SICI code
0020-1685(1996)32:8<850:REFNHG>2.0.ZU;2-6
Abstract
Features of recombination emission from graded intrinsic semiconductor structures in a nonuniform temperature field are examined theoretical ly. The thermogradient luminescence of graded structures arising from nonequilibrium carrier concentration is shown to depend strongly on ba nd-gap gradient. The intensity of thermogradient luminescence may be s ubstantially higher in graded structures than in uniform semiconductor s.