RADIATION-INDUCED ABSORPTION IN BAB2O4 NONLINEAR CRYSTALS

Authors
STELMAKH NS KRITSKAYA VE PIROGOVA GN
Citation
Ns. Stelmakh et al., RADIATION-INDUCED ABSORPTION IN BAB2O4 NONLINEAR CRYSTALS, Inorganic materials, 32(8), 1996, pp. 877-879
Citations number
6
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
8
Year of publication
1996
Pages
877 - 879
Database
ISI
SICI code
0020-1685(1996)32:8<877:RAIBNC>2.0.ZU;2-7
Abstract
The optical density of gamma-irradiated BaB2O4 was measured as a funct ion of irradiation dose in the temperature range 213-333 K. Three type s of radiation-induced centers absorbing at 210, 250, and 310 nm were identified. The effect of temperature on the formation and annealing o f radiation-induced defects in the material was studied. The annealing kinetics was investigated for the centers of transient absorption at 210, 250, 310, and 320 nm created by pulsed electron irradiation of Ba B2O4.