NB2O5-DOPED BATIO3 SEMICONDUCTOR

Authors
BELOUS AG VYUNOV OI
Citation
Ag. Belous et Oi. Vyunov, NB2O5-DOPED BATIO3 SEMICONDUCTOR, Inorganic materials, 32(8), 1996, pp. 880-884
Citations number
9
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
8
Year of publication
1996
Pages
880 - 884
Database
ISI
SICI code
0020-1685(1996)32:8<880:NBS>2.0.ZU;2-Z
Abstract
Semiconducting Nb2O5-doped BaTiO3 was prepared and characterized by x- ray diffraction, electron microscopy, thermogravimetry and electrical measurements. The addition of the Nb2O5 donor dopant does not affect t he sequence of chemical reactions during synthesis of the ceramic mate rial. The effect of microstructure on the semiconducting properties of barium titanate was studied. Electrically stable (Ba1-yCay)(Ti1-xNbx) O-3 ceramics were prepared.