NEUTRAL ELECTRON TRAP GENERATION UNDER IRRADIATION IN REOXIDIZED NITRIDED GATE DIELECTRICS

Authors
RAO VR SHARMA DK VASI J
Citation
Vr. Rao et al., NEUTRAL ELECTRON TRAP GENERATION UNDER IRRADIATION IN REOXIDIZED NITRIDED GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1467-1470
Citations number
29
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
9
Year of publication
1996
Pages
1467 - 1470
Database
ISI
SICI code
0018-9383(1996)43:9<1467:NETGUI>2.0.ZU;2-7
Abstract
In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under variou s radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses upto 5 Mrad (Si) and for bias fields up to +/-2.5 MV/cm. We explain our results in RNO and oxide dielectric s using a three step defect creation model.