AN HSPICE HBT MODEL FOR INP-BASED SINGLE HBTS

Authors
YANG K GUTIERREZAITKEN AL ZHANG X BATTHACHARYA P HADDAD GI
Citation
K. Yang et al., AN HSPICE HBT MODEL FOR INP-BASED SINGLE HBTS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1470-1472
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
9
Year of publication
1996
Pages
1470 - 1472
Database
ISI
SICI code
0018-9383(1996)43:9<1470:AHHMFI>2.0.ZU;2-O
Abstract
An ABT model for InP-based single HBT's (SHBT's) was developed based o n the conventional Gummel-Poon large-signal BJT model available in HSP ICE. Several typical characteristics observed from InP-based SHBT's, s uch as soft breakdown and collector transit-time delay effects, were m odeled through a macro modeling approach. Excellent agreement has been achieved between the experimental and calculated results based on the model.