HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS

Authors
VUILLAUME D BRAVAIX A GOGUENHEIM D MARCHETAUX JC BOUDOU A
Citation
D. Vuillaume et al., HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1473-1474
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
9
Year of publication
1996
Pages
1473 - 1474
Database
ISI
SICI code
0018-9383(1996)43:9<1473:HINOCI>2.0.ZU;2-2