RF AND 1 F NOISE INVESTIGATIONS ON MESFETS AND CIRCUITS TRANSPLANTED BY EPITAXIAL LIFT-OFF/

In this paper, we present the results of RF and noise measurements of MESFET's transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth su bstrate and subsequently reattached to a new host substrate. In the ex periments described here a 800 nm thick GaAs film containing MESFET's or complete microwave circuits is transplanted onto semi-insulating In P. Gate leakage current, RF characteristics, and noise performance of MESFET's and GaAs circuits are compared before and after ELO. Special attention was given to low-frequency (1/f) noise, 1/f noise is believe d to be caused by surface as well as bulk effects. An increase in 1/f noise could have been predicted since a new surface is exposed during the transplantation process. The mechanical stress during the transpla ntation could cause crystal damage creating additional traps which cou ld also result in an increase in 1/f noise.