NOISE CHARACTERISTICS OF TRANSISTORS FABRICATED IN AN ADVANCED SILICON BIPOLAR TECHNOLOGY

Authors
AUFINGER K BOCK J MEISTER TF POPP J
Citation
K. Aufinger et al., NOISE CHARACTERISTICS OF TRANSISTORS FABRICATED IN AN ADVANCED SILICON BIPOLAR TECHNOLOGY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1533-1538
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
9
Year of publication
1996
Pages
1533 - 1538
Database
ISI
SICI code
0018-9383(1996)43:9<1533:NCOTFI>2.0.ZU;2-6
Abstract
RF noise of transistors fabricated in an advanced silicon bipolar tech nology is investigated. The influence of the lateral scaling on the no ise figure is studied experimentally and compared with the predictions of conventional noise modeling. Reasonable agreement is found without any fitting of model parameters to the measured noise characteristics . The potential of the investigated technology for low-noise applicati ons is demonstrated by noise figures below 1 dB for frequencies up to 2 GHz and below 2 dB up to 7 GHz.