Jn. Burghartz et al., INTEGRATED RF AND MICROWAVE COMPONENTS IN BICMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1559-1570
This paper presents and discusses an approach to exploit conventional
BiCMOS technology for monolithic integration of rf & microwave systems
. Several components, which are important elements of rf & microwave c
ircuit design and which are not available in current BiCMOS, are descr
ibed and characterized. The results for integrated spiral inductors in
particular show that obvious limitations in comparison to compound se
miconductor technology or hybrid configurations can be overcome to a l
arge extent by utilizing the structural design options given with VLSI
silicon integration technology.