INTEGRATED RF AND MICROWAVE COMPONENTS IN BICMOS TECHNOLOGY

Citation
Jn. Burghartz et al., INTEGRATED RF AND MICROWAVE COMPONENTS IN BICMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1559-1570
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
43
Issue
9
Year of publication
1996
Pages
1559 - 1570
Database
ISI
SICI code
0018-9383(1996)43:9<1559:IRAMCI>2.0.ZU;2-T
Abstract
This paper presents and discusses an approach to exploit conventional BiCMOS technology for monolithic integration of rf & microwave systems . Several components, which are important elements of rf & microwave c ircuit design and which are not available in current BiCMOS, are descr ibed and characterized. The results for integrated spiral inductors in particular show that obvious limitations in comparison to compound se miconductor technology or hybrid configurations can be overcome to a l arge extent by utilizing the structural design options given with VLSI silicon integration technology.