E. Roks et al., THE DOUBLE-SIDED FLOATING-SURFACE DETECTOR - AN ENHANCED CHARGE-DETECTION ARCHITECTURE FOR CCD IMAGE SENSORS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1583-1591
A new high speed, low noise, nondestructive charge detector, called th
e Double-Sided Floating-Surface Detector (DSFSD), which is fabricated
in a standard CCD image sensor process, is reported. This detector can
be integrated in CCD image sensors and is capable of detecting large
charge packets at very low noise levels. Typical values are 5-8 noise
electrons (within a bandwidth of 5 MHz) for a charge packet size of 10
0000 to 250000 electrons. The detector is used as the first MOS transi
stor in a three-stage source-follower configuration with a bandwidth o
f 150 MHz. The performance of both the traditional Floating-Surface De
tector and Double-Sided Floating-Surface Detector (DSFSD) are calculat
ed using a new, simple, model. This model is experimentally verified.