X-RAY MULTIPLE DIFFRACTION PHENOMENON IN THE EVALUATION OF SEMICONDUCTOR CRYSTALLINE PERFECTION

In this work, a method that takes advantage of the three-dimensional n ature of the X-ray multiple-diffraction (MD) phenomenon for evaluating the crystalline perfection of semiconductors is proposed. The energy- transfer process among the MD beams can occur in a kinematical (second ary extinction) or a dynamical (primary extinction) regime. The effect s that each regime can have on MD Bragg condition are theoretically in vestigated. The method provides information on size and misorientation of perfect-crystal regions as well as on the probability of interacti on between them. The perfection of GaAs and Ge (001) surfaces after me chanical and/or chemical polishing has been investigated with this met hod and, as an extension of its applicability, porous silicon and GaAs (001) with Se ions implanted were also investigated.