PROCESS TECHNOLOGY FOR MONOLITHIC HIGH-SPEED SCHOTTKY RESONANT TUNNELING DIODE LOGIC INTEGRATED-CIRCUITS/

Authors
LEI PM SUBRAMANIAM S BERNSTEIN GH WILLIAMSON W GILBERT BK CHOW DH
Citation
Pm. Lei et al., PROCESS TECHNOLOGY FOR MONOLITHIC HIGH-SPEED SCHOTTKY RESONANT TUNNELING DIODE LOGIC INTEGRATED-CIRCUITS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3497-3501
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
6
Year of publication
1996
Pages
3497 - 3501
Database
ISI
SICI code
1071-1023(1996)14:6<3497:PTFMHS>2.0.ZU;2-G
Abstract
A seven-layer process was developed to fabricate monolithic high-speed logic circuits, requiring integration of Schottky diodes and resistor s with interband resonant tunneling diodes (RTDs). With this process t echnology, we have demonstrated a functionally complete logic family b ased on RTDs with a maximum operating frequency in excess of 12 GHz an d a minimum power dissipation-on the order of 0.5 mW per gate. (C) 199 6 American Vacuum Society.