DRY-ETCHING DAMAGE IN III-V SEMICONDUCTORS

Dry etching using ions can cause damage to the underlying semiconducto r. This paper discusses damage in III-V semiconductors and presents ex amples of etching conditions under which it can be effectively elimina ted. A distinction between surface and sidewall damage is made and met hods of measuring both parameters are reviewed. It is noted that the n oble gases cause relatively deep damage, while under the correct circu mstances, etchants that have a marked chemical effect can cause much l ess damage. The present state of understanding of the mechanisms for t he damage is discussed. (C) 1996 American Vacuum Society.