FUNDAMENTAL LIMITS TO IMAGING RESOLUTION FOR FOCUSED ION-BEAMS

Citation
J. Orloff et al., FUNDAMENTAL LIMITS TO IMAGING RESOLUTION FOR FOCUSED ION-BEAMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3759-3763
Citations number
11
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
6
Year of publication
1996
Pages
3759 - 3763
Database
ISI
SICI code
1071-1023(1996)14:6<3759:FLTIRF>2.0.ZU;2-A
Abstract
This article investigates the limitations on the formation of focused ion beam images from secondary electrons. We use the notion of the inf ormation content of an image to account for the effects of resolution, contrast, and signal-to-noise ratio and show that there is a competit ion between the rate at which small features are sputtered away by the primary beam and the rate of collection of secondary electrons. We fi nd that for small features, sputtering is the limit to imaging resolut ion, and that for extended small features (e.g., layered structures), rearrangement, redeposition, and differential sputtering rates may lim it the resolution in some cases. (C) 1996 American Vacuum Society.