J. Orloff et al., FUNDAMENTAL LIMITS TO IMAGING RESOLUTION FOR FOCUSED ION-BEAMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3759-3763
This article investigates the limitations on the formation of focused
ion beam images from secondary electrons. We use the notion of the inf
ormation content of an image to account for the effects of resolution,
contrast, and signal-to-noise ratio and show that there is a competit
ion between the rate at which small features are sputtered away by the
primary beam and the rate of collection of secondary electrons. We fi
nd that for small features, sputtering is the limit to imaging resolut
ion, and that for extended small features (e.g., layered structures),
rearrangement, redeposition, and differential sputtering rates may lim
it the resolution in some cases. (C) 1996 American Vacuum Society.