Thp. Chang et al., ELECTRON-BEAM MICROCOLUMNS FOR LITHOGRAPHY AND RELATED APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3774-3781
Lithography with an array of miniaturized scanning electron-beam colum
ns presents one of the most promising high-throughput possibilities fo
r fabrication of devices with feature sizes less than 100 nm. With sca
nning electron beams no mask is required and the necessary resolution
and alignment of overlay structures are realizable. With arrays of mic
rocolumns, the lithography throughput of a single column can be multip
lied. The approach can also be used for a number of lithography relate
d applications such as metrology, inspection, testing, etc. We review
the status of the microcolumn program and discuss opportunities and ch
allenges of this approach to high-throughput nanolithography and relat
ed applications. Special emphasis is given to lithography in the 100 n
m regime. (C) 1996 American Vacuum Society.