HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY USING ZEP-520 AND KRS RESISTS AT LOW-VOLTAGE

ZEP-520 and KRS resist systems have been evaluated as candidates for u se in low voltage electron beam lithography. ZEP-520 is a conventional chain scission resist which has a positive tone for over two orders o f magnitude in exposure dose. KRS is a chemically amplified resist whi ch can be easily tone reversed with a sensitivity similar to 8 mu C/cm (2) at 1 keV. Both resist systems are shown to have sensitivities simi lar to 1 mu C/cm(2) for positive tone area exposures to 1 keV electron s. A decrease in contrast in 50 nm thick resist layers is seen when ex posure voltage is lowered from 2 to 1 keV, indicating nonuniform energ y deposition over the resist thickness. High resolution single pass li nes have been transferred into both Si and SiO2 substrates at both low and high voltages in each resist system without using multilayer resi st masks. The ZEP-520 and KRS resists are shown to have resolutions of 50 and 60 nn, respectively, at 1 kV, within a factor of 2 of their hi gh voltage resolutions under identical development conditions. A cusp shaped etch profile in Si allows high aspect ratio 20 nm wide trenches to be fabricated using these resists on bulk Si. Low voltage exposure s have been used to pattern gratings with periods as small as 75 and 1 00 nm in ZEP-520 and KRS, respectively. Low voltage exposures on SiO2 show no indications of pattern distortion due to charging or proximity effects. (C) 1996 American Vacuum Society.