H. Nakamura et al., DIVOT DEFECT REPAIR ON A DEEP-ULTRAVIOLET SINX HALF-TONE MASK, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3892-3895
Divot defect repair on deep ultraviolet SiNx halftone masks in the cas
e of 0.275 mu m (on a wafer) line and space patterns was investigated
experimentally. The problem regarding imaging is the difficulty of are
a recognition due to low contrast of halftone masks without the focuse
d ion beam (FIB) irradiation damage. It is overcome by means of limiti
ng the total FIB dose for imaging and by means of image processing wit
h an image filter. Opaque carbon (C) film deposition on a divot defect
was found to improve the performance of a defective area. The degree
of the improvement was not perfect but allowable for practical use. It
was also found that there were other factors that make the performanc
e of the repaired area worse than the nondefective area, except for mi
ssing of the phase shift effect. (C) 1996 American Vacuum Society.