Sk. Guharay et al., HIGH-BRIGHTNESS ION-SOURCE FOR ION PROJECTION LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3907-3910
A Penning-type surface plasma source has been developed with the goal
to achieve the beam requirements for ion projection lithography (IPL).
The present source, with simple, forced air cooling runs up to a duty
factor of 1% (pulse length of 1 ms and repetition rate of 10 Hz); a c
w Penning source is being planned for IPL. H- emission current density
of more than 2 A/cm(2) has been obtained with negligibly low noise. T
he perpendicular temperature is about 0.6 eV for emission current dens
ity of about 1 A/cm(2)-this yields normalized beam brightness of more
than 10(12) A/(mrad)(2). The energy spread full width at half-maximum
(FWHM) for a 5 kV beam with angular current density of 33 mA/sr is abo
ut 3.3 eV (close to instrumental resolution). The energy spread increa
ses with beam intensity. In preliminary experiments on positive ion ex
traction, noiseless H+ beams with emission current density of about 15
0 mA/cm(2) have been achieved. (C) 1996 American Vacuum Society.