HIGH-BRIGHTNESS ION-SOURCE FOR ION PROJECTION LITHOGRAPHY

Citation
Sk. Guharay et al., HIGH-BRIGHTNESS ION-SOURCE FOR ION PROJECTION LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3907-3910
Citations number
12
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
6
Year of publication
1996
Pages
3907 - 3910
Database
ISI
SICI code
1071-1023(1996)14:6<3907:HIFIPL>2.0.ZU;2-U
Abstract
A Penning-type surface plasma source has been developed with the goal to achieve the beam requirements for ion projection lithography (IPL). The present source, with simple, forced air cooling runs up to a duty factor of 1% (pulse length of 1 ms and repetition rate of 10 Hz); a c w Penning source is being planned for IPL. H- emission current density of more than 2 A/cm(2) has been obtained with negligibly low noise. T he perpendicular temperature is about 0.6 eV for emission current dens ity of about 1 A/cm(2)-this yields normalized beam brightness of more than 10(12) A/(mrad)(2). The energy spread full width at half-maximum (FWHM) for a 5 kV beam with angular current density of 33 mA/sr is abo ut 3.3 eV (close to instrumental resolution). The energy spread increa ses with beam intensity. In preliminary experiments on positive ion ex traction, noiseless H+ beams with emission current density of about 15 0 mA/cm(2) have been achieved. (C) 1996 American Vacuum Society.