0.1-MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTORS AND BEYOND

The size of metal-oxide-semiconductor field effect transistors has bee n drastically miniaturized to achieve higher performance according to the scaling law. 0.1 mu m complementary metal-oxide-semiconductor (CMO S) technology is no longer at the frontier of device research; it is b eing optimized as a real device. The scaling law has been partly modif ied but the overall direction of device technology is still following that scenario. This article will first review some key messages that h ave been learned from 0.1 mu m CMOS development in our laboratories. I n the sub-0.1 mu m era, there will be a strong demand for new device p hysics and technologies, including new materials, for a new electronic s paradigm. As an example of the new devices, silicon single electron tunneling devices will be discussed here in terms of their graceful as similation into the current silicon ultralarge scale integration world . (C) 1996 American Vacuum Society.