FABRICATION OF BACK-GATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES USING MIXED AND MATCHED OPTICAL AND X-RAY LITHOGRAPHIES

A novel silicon-on-insulator-based technology called silicon-on-insula tor-with- active-substrate (SOIAS) [I. Y. Yang, C. Vieri, A. Chandraka san, and D. A. Antoniadis, in International Electron Device Meeting (I EEE, Washington, DC, 1995), p. 877] was developed for high performance and low power electronic systems, which takes advantage of establishe d silicon processes such as chemical mechanical polishing, wafer bondi ng, and the various lithographic tools used for deep submicrometer pat terning. This article demonstrates the fabrication of deep submicromet er back-gated complementary metal-oxide semiconductor devices and simp le circuits on SOIAS substrates using optical and x-ray lithographies with our mix-and-match strategy [I. Y. Yang, S. Silverman, J. Ferrera, K. Jackson, J. Carter, D. A. Antoniadis, and H. Smith, J. Vac. Sci. T echnol.B 13, 2741 (1995)]. (C) 1996 American Vacuum Society.