FABRICATION OF LATERAL RESONANT-TUNNELING DEVICES WITH HETEROSTRUCTURE BARRIERS

Lateral resonant tunneling devices that employ heterostructure charge barriers are candidates to replace complementary metal-oxide-semicondu ctor devices as the basic device type that will drive integrated circu it technology in the next century. We present progress in lateral reso nant tunneling device technology including the first lateral resonant tunneling transistor that has heterostructure barriers to be fabricate d with planar processing techniques. The devices produced to date are limited to cryogenic operation; however, they do demonstrate that late ral resonant tunneling devices can be fabricated with etch and regrowt h techniques and suggest the possibility of an integrated circuit tech nology that may be scaled down to less than 10 nm and would operate at room temperature. (C) 1996 American Vacuum Society.