A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/

We present a 0.10 mu m n-type metal-oxide-semiconductor process to ach ieve devices with reduced short channel effect (SCE) and good current drive capability. Full compatible chemical amplified resist process be tween deep ultraviolet and electron-beam Lithography allowed us to Use hybrid lithography at gate level. For the first time, we show that th e conventional gate reoxidation is a Limiting step to process integrat ion because of the bird's beak formation at the poly-gate edge. Conseq uently, this process is replaced by a low thermal oxide deposition. In addition, indium and gallium pocket implantations have been realized to improve the SCE control. (C) 1996 American Vacuum Society.