FABRICATION OF INP-BASED WAVELENGTH-DIVISION MULTIPLEXING ARRAYED-WAVE-GUIDE FILTERS USING CHEMICALLY ASSISTED ION-BEAM ETCHING

Citation
C. Youtsey et al., FABRICATION OF INP-BASED WAVELENGTH-DIVISION MULTIPLEXING ARRAYED-WAVE-GUIDE FILTERS USING CHEMICALLY ASSISTED ION-BEAM ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4091-4095
Citations number
15
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
6
Year of publication
1996
Pages
4091 - 4095
Database
ISI
SICI code
1071-1023(1996)14:6<4091:FOIWMA>2.0.ZU;2-R
Abstract
Chemically assisted ion beam etching using Cl-2 has been used to fabri cate InP-based arrayed waveguide filters that demonstrate full polariz ation independence and excellent performance characteristics. The proc ess is carried out at elevated temperatures of approximately 250 degre es C to avoid difficulties associated with the low volatility of indiu m chlorides at lower temperatures. Optimization of the process for smo oth, vertical etching is discussed. InP regrowth is successfully carri ed out on the etched InGaAsP guides, and measurements of the fabricate d devices are presented. The adaptation of the process for angled etch ing is also demonstrated. (C) 1996 American Vacuum Society.