CHARACTERIZATION AND CORRECTION OF OPTICAL PROXIMITY EFFECTS IN DEEP-ULTRAVIOLET LITHOGRAPHY USING BEHAVIOR MODELING

We present the characterization of optical proximity effects and their correction in deep-UV lithography using an empirically derived model for calculating feature sizes in resist. The model is based on convolu tion of the mask pattern with a set of kernels determined from measuri ng the printed test structures in resist. The fit of the model to the measurement data is reviewed. The model is then used for proximity cor rection using commercially available proximity correction software. Co rrections based on this model is effective in restoring resist lineari ty and in reducing line-end shortening. It is also more effective in r educing optical proximity effects than corrections based only on aeria l image calculations. (C) 1996 American Vacuum Society.