PASSIVATE SINX HALF-TONE PHASE-SHIFTING MASK FOR DEEP-ULTRAVIOLET EXPOSURE

Authors
ITO S IWAMATSU T SATO H ASANO M KAWANO K MIYASHITA F
Citation
S. Ito et al., PASSIVATE SINX HALF-TONE PHASE-SHIFTING MASK FOR DEEP-ULTRAVIOLET EXPOSURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4199-4202
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
6
Year of publication
1996
Pages
4199 - 4202
Database
ISI
SICI code
1071-1023(1996)14:6<4199:PSHPMF>2.0.ZU;2-3
Abstract
Halftone phase shift masks with a single-layer SiNx absorption film wh ose stoichiometric ratio x was controlled were developed at 365 and 24 8 nm, respectively. Because this stoichiometric ratio x was smaller th an 1.33 (Si3N4), the SiNx halftone films were unstable, especially dur ing 248 nm exposure, causing a transmittance error. In this article, w e show how to get stable SiN, film for 248 nm exposure. (C) 1996 Ameri can Vacuum Society.