PROSPECT AND CHALLENGES OF ARF EXCIMER-LASER LITHOGRAPHY PROCESSES AND MATERIALS

Practical chemically amplified resists for 193 nm Lithography will be realized from newly developed polar alicyclic base polymers. Their res ist performance is likely to be equal to that of resists used for 248 nm lithography, since a 193 nm resist basically follows the same physi cal rules as a conventional resist. Top surface imaging with a combina tion of 193 nm exposure and bi-functional silyation reagent B(DMA)MS w as used to produce 0.12 mu m L&S patterns. This resolution corresponds to a k(1) factor of 0.34. Therefore, the use of dry-developed resists , which provide excellent resolution and a generous process margin, wi ll help extend the use of 193 nm lithography. However, resolution enha ncement techniques must still be developed to improve the process wind ow. (C) 1996 American Vacuum Society.