PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY

Authors
HORN MW MAXWELL BE GOODMAN RB KUNZ RR ERIKSEN LM
Citation
Mw. Horn et al., PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4207-4211
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
6
Year of publication
1996
Pages
4207 - 4211
Database
ISI
SICI code
1071-1023(1996)14:6<4207:PSRF1N>2.0.ZU;2-B
Abstract
Plasma-enhanced chemical-vapor-deposited carbon-based polymer films ar e examined for use as an ah-dry positive-tone photoresist for 193 nm l ithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction with hyd roxyl groups. After oxygen plasma pattern transfer, features with reso lution below 0.25 mu m have been obtained. (C) 1996 American Vacuum So ciety.